C5027 TRANSISTOR DATASHEET PDF

We use Cookies to give you best experience on our website. By using our website and services, you expressly agree to the placement of our performance, functionality and advertising cookies. Please see our Privacy Policy for more information. Early attempts to adapt these techniques to power amplifier design , state power amplifier design through the use of large signal transistor input and output impedances , amplifier provide a conjugate match to the transistor , such that the input and output impedances of the , sheets is presented in parallel equivalent form of resistance and capacitance.

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Base 2. Collector 3. A, February High Voltage and High Reliability. NPN Silicon Transistor. V CBO. V CEO. V EBO. T STG. Collector-Base Voltage. Collector-Emitter Voltage. Emitter-Base Voltage. Collector Current DC. Collector Current Pulse. Base Current. Junction Temperature. Storage Temperature. BV CBO. BV CEO. BV EBO. V CEX sus. I CBO. I EBO. V CE sat. V BE sat. Collector-Base Breakdown Voltage. Collector-Emitter Breakdown Voltage.

Emitter-Base Breakdown Voltage. Collector-Emitter Sustaining Voltage. Collector Cut-off Current. Emitter Cut-off Current. DC Current Gain. Collector-Emitter Saturation Voltage. Base-Emitter Saturation Voltage.

Output Capacitance. Current Gain Bandwidth Product. Turn ON Time. Storage Time. Fall Time. Test Condition. No Preview Available! Typical Characteristics. II BB. Figure 1. Static Characteristic. Figure 3. Figure 5. Switching Time. Figure 2. DC current Gain. Figure 4. Base-Emitter On Voltage.

I C MAX. Figure 6. Safe Operating Area. Fairchild Semiconductor Electronic Components Datasheet. Part Number. C Datasheet PDF. View PDF for Mobile. Won-Top Electronics. Hitachi Semiconductor. Site map. Contact us.

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