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Base 2. Collector 3. A, February High Voltage and High Reliability. NPN Silicon Transistor. V CBO. V CEO. V EBO. T STG. Collector-Base Voltage. Collector-Emitter Voltage. Emitter-Base Voltage. Collector Current DC. Collector Current Pulse. Base Current. Junction Temperature. Storage Temperature. BV CBO. BV CEO. BV EBO. V CEX sus. I CBO. I EBO. V CE sat. V BE sat. Collector-Base Breakdown Voltage. Collector-Emitter Breakdown Voltage.
Emitter-Base Breakdown Voltage. Collector-Emitter Sustaining Voltage. Collector Cut-off Current. Emitter Cut-off Current. DC Current Gain. Collector-Emitter Saturation Voltage. Base-Emitter Saturation Voltage.
Output Capacitance. Current Gain Bandwidth Product. Turn ON Time. Storage Time. Fall Time. Test Condition. No Preview Available! Typical Characteristics. II BB. Figure 1. Static Characteristic. Figure 3. Figure 5. Switching Time. Figure 2. DC current Gain. Figure 4. Base-Emitter On Voltage.
I C MAX. Figure 6. Safe Operating Area. Fairchild Semiconductor Electronic Components Datasheet. Part Number. C Datasheet PDF. View PDF for Mobile. Won-Top Electronics. Hitachi Semiconductor. Site map. Contact us.
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