MPSA42 PDF

October B SOT Mark: 1D. Ordering Information. Part Number.

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October B SOT Mark: 1D. Ordering Information. Part Number. Top Mark. TO 3L. SOT 3L. SOT 4L. Packing Method. Tape and Reel. Absolute Maximum Ratings 1 , 2. Stresses exceeding the absolute maximum ratings may damage the device. The device may not function or be opera-. In addi-. V CEO. V CBO. V EBO. Collector-Emitter Voltage. Collector-Base Voltage. Emitter-Base Voltage. Collector Current - Continuous. Operating and Storage Junction Temperature Range.

These are steady-state limits. Fairchild Semiconductor should be consulted on applications involving pulsed or. Thermal Characteristics. Total Device Dissipation.

Thermal Resistance, Junction-to-Case. Thermal Resistance, Junction-to-Ambient. Electrical Characteristics. Off Characteristics. On Characteristics 5. Small Signal Characteristics. Current Gain - Bandwidth Product. C cb Collector-Base Capacitance. The device may not function or be opera- ble above the recommended operating conditions and stressing the parts to these levels is not recommended. In addi- tion, extended exposure to stresses above the recommended operating conditions may affect device reliability.

The absolute maximum ratings are stress ratings only. Fairchild Semiconductor should be consulted on applications involving pulsed or low-duty-cycle operations. Symbol Parameter Max. Unit V V 6V 0.

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MPSA42 Datasheet, Equivalent, Cross Reference Search

MPSA42 is a NPN transistor hence the collector and emitter will be left open Reverse biased when the base pin is held at ground and will be closed Forward biased when a signal is provided to base pin. It has a gain value of 30; this value determines the amplification capacity of the transistor normally MPSA42 will not be used for amplification due to its low gain value. The maximum amount of current that could flow through the Collector pin is mA, hence we cannot drive loads that consume more than mA using this transistor. To bias a transistor we have to supply current to base pin, this current IB should be limited to 5mA. When this transistor is fully biased then it can allow a maximum of mA to flow across the collector and emitter.

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